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A-DATA Technology DQVE1908 512MB
V-GEN D4S8GL32A8TS 8GB

A-DATA Technology DQVE1908 512MB vs V-GEN D4S8GL32A8TS 8GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.7
    测试中的平均数值
V-GEN D4S8GL32A8TS 8GB 需要考虑的原因
V-GEN D4S8GL32A8TS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    56 left arrow 66
    左右 -18% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
V-GEN D4S8GL32A8TS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 56
  • 读取速度，GB/s
    2,775.5 left arrow 18.7
  • 写入速度，GB/s
    1,557.9 left arrow 8.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2235

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

V-GEN D4S8GL32A8TS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
V-GEN D4S8GL32A8TS 8GB
V-GEN D4S8GL32A8TS 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M393A1K43BB1-CTD 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Avant Technology J641GU42J9266ND 8GB
Avant Technology J641GU42J9266ND 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
内存RAM
Samsung M392B2G70DM0-YH9 16GB
Samsung M392B2G70DM0-YH9 16GB
Samsung M392B1K70CM0-YH9 8GB
Samsung M392B1K70CM0-YH9 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Essencore Limited KD48GU880-32A160U 8GB
Essencore Limited KD48GU880-32A160U 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM