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A-DATA Technology DQVE1B16 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
比较
A-DATA Technology DQVE1B16 2GB vs A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
总分
A-DATA Technology DQVE1B16 2GB
总分
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
15.9
测试中的平均数值
更快的写入速度,GB/s
2,285.0
12.3
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
报告一个错误
低于PassMark测试中的延时,ns
39
68
左右 -74% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1B16 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
68
39
读取速度,GB/s
4,165.3
15.9
写入速度,GB/s
2,285.0
12.3
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
784
2878
A-DATA Technology DQVE1B16 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9965589-031.D01G 2GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMT32GX4M4C3466C16 8GB
Samsung M393B1G70BH0-YK0 8GB
Golden Empire CL19-19-19 D4-2666 4GB
A-DATA Technology DDR3 1600 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905678-065.A00G 8GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905744-005.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3333C16-8GVR 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
G Skill Intl F5-6000J3636F16G 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Hexon Technology Pte Ltd HEXON 1GB
Samsung T471A1K43CB1-CRC 8GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
报告一个错误
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