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A-DATA Technology DQVE1B16 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB

A-DATA Technology DQVE1B16 2GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

总分
star star star star star
A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1B16 2GB 需要考虑的原因
A-DATA Technology DQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,285.0 left arrow 14.3
    测试中的平均数值
G Skill Intl F4-3200C16-16GTZKO 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKO 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 68
    左右 -224% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1B16 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 21
  • 读取速度，GB/s
    4,165.3 left arrow 18.7
  • 写入速度，GB/s
    2,285.0 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3437

A-DATA Technology DQVE1B16 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B2G70BH0-CK0 16GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston MSI24D4U7D8MD-16 16GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Kingston 9905458-017.A01LF 4GB
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内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMD32GX4M4B3466C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
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Corsair CM2X1024-8500C5D 1GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Micron Technology 8ATF1G64AZ-2G3A1 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
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Corsair CMR16GX4M2E4266C19 8GB
内存RAM
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Kingston 9905403-011.A03LF 2GB
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Corsair CMU32GX4M2A2400C14 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM