A-DATA Technology VDQVE1B16 2GB vs Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 17.4

测试中的平均数值
更快的写入速度，GB/s

2,061.2 13.0

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

4,937.3 17.4
写入速度，GB/s

2,061.2 13.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 3162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

UMAX Technology 16GB

UMAX Technology 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB