A-DATA Technology VDQVE1B16 2GB vs Corsair CMK32GX4M4K4266C19 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 21.2

测试中的平均数值
更快的写入速度，GB/s

2,061.2 19.1

测试中的平均数值

Corsair CMK32GX4M4K4266C19 8GB

需要考虑的原因
Corsair CMK32GX4M4K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 46

左右 -119% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMK32GX4M4K4266C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 21
读取速度，GB/s

4,937.3 21.2
写入速度，GB/s

2,061.2 19.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 4404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43EB1-CWE 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

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Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

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G Skill Intl F3-1600C11-4GIS 4GB

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Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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