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A-DATA Technology VDQVE1B16 2GB
Corsair CMSX16GX4M2A2400C16 8GB

A-DATA Technology VDQVE1B16 2GB vs Corsair CMSX16GX4M2A2400C16 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Corsair CMSX16GX4M2A2400C16 8GB

Corsair CMSX16GX4M2A2400C16 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 12.0
    测试中的平均数值
Corsair CMSX16GX4M2A2400C16 8GB 需要考虑的原因
Corsair CMSX16GX4M2A2400C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 46
    左右 -35% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Corsair CMSX16GX4M2A2400C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 34
  • 读取速度，GB/s
    4,937.3 left arrow 15.4
  • 写入速度，GB/s
    2,061.2 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2791

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Corsair CMSX16GX4M2A2400C16 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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内存RAM
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Apacer Technology 76.D305G.D060B 16GB
内存RAM
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内存RAM
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内存RAM
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Kingston 99U5584-001.A00LF 4GB
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内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
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Corsair CMW16GX4M2A2666C16 8GB
内存RAM