A-DATA Technology VDQVE1B16 2GB vs Corsair CMU16GX4M2C3000C15 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值
更快的写入速度，GB/s

2,061.2 13.5

测试中的平均数值

Corsair CMU16GX4M2C3000C15 8GB

需要考虑的原因
Corsair CMU16GX4M2C3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMU16GX4M2C3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

4,937.3 17.8
写入速度，GB/s

2,061.2 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-465.A00LF 8GB

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G Skill Intl F4-3300C16-4GRKD 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Essencore Limited KD48GU880-34A170X 8GB

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Samsung M474A2K43BB1-CRC 16GB

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G Skill Intl F4-3600C16-32GTZN 32GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Micron Technology 16ATF2G64AZ-2G6H1 16GB

Micron Technology 16ATF2G64AZ-2G6H1 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Kingston KHX2133C13S4/8G 8GB

Kingston KHX2133C13S4/8G 8GB