A-DATA Technology VDQVE1B16 2GB vs Crucial Technology BLS16G4D32AESB.M16FE 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值
更快的写入速度，GB/s

2,061.2 15.2

测试中的平均数值

Crucial Technology BLS16G4D32AESB.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESB.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 -59% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 29
读取速度，GB/s

4,937.3 18.5
写入速度，GB/s

2,061.2 15.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 3784

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK16GX4M2E4333C19 8GB

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G Skill Intl F4-3000C15-8GRKB 8GB

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Kingston 9905403-444.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMT451U6AFR8C-PB 4GB

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SK Hynix DMT451E6AFR8C-PB 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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AMD R538G1601U2S-UO 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB