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A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

A-DATA Technology VDQVE1B16 2GB vs Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 11.9
    测试中的平均数值
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 46
    左右 -39% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 33
  • 读取速度，GB/s
    4,937.3 left arrow 15.7
  • 写入速度，GB/s
    2,061.2 left arrow 11.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2634

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMWX16GC3000C16W4D 16GB
Corsair CMWX16GC3000C16W4D 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Golden Empire CL15-15-15 D4-2666 4GB
Golden Empire CL15-15-15 D4-2666 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3000C15-16GVR 16GB
G Skill Intl F4-3000C15-16GVR 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Kingston 9905713-030.A00G 8GB
Kingston 9905713-030.A00G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMR16GX4M2Z2933C16 8GB
Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM