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A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB

A-DATA Technology VDQVE1B16 2GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 12.2
    测试中的平均数值
Crucial Technology CT8G4DFRA266.C8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 46
    左右 -21% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 38
  • 读取速度，GB/s
    4,937.3 left arrow 14.6
  • 写入速度，GB/s
    2,061.2 left arrow 12.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2915

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Crucial Technology CT8G4DFRA266.C8FJ 8GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Kingston 9905403-170.A00LF 2GB
Kingston 9905403-170.A00LF 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-8GSXKB 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3000C14-16GVR 16GB
G Skill Intl F4-3000C14-16GVR 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
Super Talent STT-WB160CL0901 2GB
Super Talent STT-WB160CL0901 2GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BL16G30C15U4B.16FE 16GB
Crucial Technology BL16G30C15U4B.16FE 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston MSISID4S9S8ME-8 8GB
Kingston MSISID4S9S8ME-8 8GB
内存RAM