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A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB

A-DATA Technology VDQVE1B16 2GB vs Crucial Technology CT8G4DFS8213.C8FAD1 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.7
    测试中的平均数值
Crucial Technology CT8G4DFS8213.C8FAD1 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 46
    左右 -84% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 2,061.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 25
  • 读取速度，GB/s
    4,937.3 left arrow 13.7
  • 写入速度，GB/s
    2,061.2 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2290

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-16GTRS 16GB
G Skill Intl F4-3600C18-16GTRS 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMR16GX4M2K4266C19 8GB
Corsair CMR16GX4M2K4266C19 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMK16GX4M4B3200C15 4GB
Corsair CMK16GX4M4B3200C15 4GB
内存RAM
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
内存RAM