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A-DATA Technology VDQVE1B16 2GB
Essencore Limited KD4AGU880-36A180C 16GB

A-DATA Technology VDQVE1B16 2GB vs Essencore Limited KD4AGU880-36A180C 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 23.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 18.6
    测试中的平均数值
Essencore Limited KD4AGU880-36A180C 16GB 需要考虑的原因
Essencore Limited KD4AGU880-36A180C 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 46
    左右 -64% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Essencore Limited KD4AGU880-36A180C 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 28
  • 读取速度，GB/s
    4,937.3 left arrow 23.6
  • 写入速度，GB/s
    2,061.2 left arrow 18.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    759 left arrow 4114

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Essencore Limited KD4AGU880-36A180C 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Essencore Limited KD4AGU880-36A180C 16GB
Essencore Limited KD4AGU880-36A180C 16GB
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Kingston ACR512X64D3S13C9G 4GB
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SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905713-017.A00G 4GB
Kingston 9905713-017.A00G 4GB
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Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M4B3200C16 4GB
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Mushkin 991586 2GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
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Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
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Kingston KHX318C10FR/8G 8GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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Patriot Memory (PDP Systems) PSD48G240081 8GB
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Kingston HP32D4U8D8HC-16X 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Kingston HP26D4U6D8ME-16X 16GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
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Kingston HP698651-154-MCN 8GB
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Apacer Technology 78.CAGR9.40C0B 8GB
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