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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C15-16GVR 16GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-2800C15-16GVR 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 12.0
    测试中的平均数值
G Skill Intl F4-2800C15-16GVR 16GB 需要考虑的原因
G Skill Intl F4-2800C15-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 46
    左右 -53% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C15-16GVR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 30
  • 读取速度，GB/s
    4,937.3 left arrow 16.4
  • 写入速度，GB/s
    2,061.2 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3148

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-2800C15-16GVR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
Kingston KHX2666C16/8G 8GB
Kingston KHX2666C16/8G 8GB
内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HP32D4U2S8ME-16 16GB
Kingston HP32D4U2S8ME-16 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM