A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3200C18-16GRS 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.0

测试中的平均数值

G Skill Intl F4-3200C18-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3200C18-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 46

左右 -15% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C18-16GRS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 40
读取速度，GB/s

4,937.3 16.0
写入速度，GB/s

2,061.2 14.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2965

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CB16GS2400.C16J 16GB

Crucial Technology CB16GS2400.C16J 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Transcend Information JM2666HLB-16G 16GB

Transcend Information JM2666HLB-16G 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

INTENSO M418039 8GB

INTENSO M418039 8GB