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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C19-4GTZ 4GB
比较
A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-4000C19-4GTZ 4GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
G Skill Intl F4-4000C19-4GTZ 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
19.4
测试中的平均数值
更快的写入速度,GB/s
2,061.2
15.0
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4000C19-4GTZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
20
46
左右 -130% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C19-4GTZ 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
20
读取速度,GB/s
4,937.3
19.4
写入速度,GB/s
2,061.2
15.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
759
3217
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
G Skill Intl F4-4000C19-4GTZ 4GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273DH0-CH9 4GB
Samsung M393A1G43EB1-CRC 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9965604-001.D00G 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C19-4GTZ 4GB
Avant Technology F6451U64F9333G 4GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Kingston 9965516-049.A00LF 8GB
Corsair CMD64GX4M4B3000C15 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMX4GX3M1A1333C9 4GB
Micron Technology AFLD44EK2P 4GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK32GX4M4A2133C15 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 99U5663-007.A00G 16GB
Kingston 9905403-447.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
报告一个错误
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