A-DATA Technology VDQVE1B16 2GB vs Kingston 8ATF1G64HZ-2G3B2 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 107

左右 57% 更低的延时

Kingston 8ATF1G64HZ-2G3B2 8GB

需要考虑的原因
Kingston 8ATF1G64HZ-2G3B2 8GB

报告一个错误

更快的读取速度，GB/s

8.5 4

测试中的平均数值
更快的写入速度，GB/s

4.7 2,061.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston 8ATF1G64HZ-2G3B2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 107
读取速度，GB/s

4,937.3 8.5
写入速度，GB/s

2,061.2 4.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 1022

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-16GVR 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-3000C16-16GTZN 16GB

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Samsung M378B5173BH0-CH9 4GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

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Kingston 9965516-112.A00LF 16GB

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SK Hynix HYMP125S64CP8-S6 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

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Corsair CMK16GX4M4A2800C16 4GB

Corsair CMK16GX4M4A2800C16 4GB

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Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB