A-DATA Technology VDQVE1B16 2GB vs Kingston 9905399-003.A00LF 1GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston 9905399-003.A00LF 1GB

Kingston 9905399-003.A00LF 1GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 58

左右 21% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

2,061.2 1,495.8

测试中的平均数值
更高的内存带宽，mbps

6400 4200

左右 1.52% 更高的带宽

Kingston 9905399-003.A00LF 1GB

需要考虑的原因
Kingston 9905399-003.A00LF 1GB

报告一个错误

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston 9905399-003.A00LF 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

46 58
读取速度，GB/s

4,937.3 3,316.7
写入速度，GB/s

2,061.2 1,495.8
内存带宽，mbps

6400 4200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 4-4-4-12 / 533 MHz
排名PassMark (越多越好)

759 468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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Super Talent F24SB8GH 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Golden Empire CL16-16-16 D4-2400 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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V-Color Technology Inc. TC48G24S817 8GB

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Kingston ACR16D3LS1KNG/8G 8GB

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AMD R538G1601U2S-UGO 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

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Corsair CMK16GX4M2F4500C19 8GB

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Corsair CMK16GX4M2F4500C19 8GB

Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M471A2K43CBCBCRC 16GB

Samsung M471A2K43CBCBCRC 16GB