A-DATA Technology VDQVE1B16 2GB vs Kingston 9965669-008.A03G 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston 9965669-008.A03G 16GB

Kingston 9965669-008.A03G 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 13.8

测试中的平均数值

Kingston 9965669-008.A03G 16GB

需要考虑的原因
Kingston 9965669-008.A03G 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 46

左右 -21% 更低的延时
更快的写入速度，GB/s

9.5 2,061.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston 9965669-008.A03G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 38
读取速度，GB/s

4,937.3 13.8
写入速度，GB/s

2,061.2 9.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-32GTZN 32GB

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AMD R5316G1609U2K 8GB

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Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

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G Skill Intl F4-3200C16-4GVRB 4GB

Corsair CML16GX3M2A1600C10 8GB

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Kingston 99U5429-014.A00LF 4GB

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Kingston 9905403-038.A00G 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Gloway International (HK) STK2133C15-8GB 8GB