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A-DATA Technology VDQVE1B16 2GB
Samsung M471A2K43BB1-CRC 16GB

A-DATA Technology VDQVE1B16 2GB vs Samsung M471A2K43BB1-CRC 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.2
    测试中的平均数值
Samsung M471A2K43BB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43BB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 46
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 2,061.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Samsung M471A2K43BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 38
  • 读取速度，GB/s
    4,937.3 left arrow 14.2
  • 写入速度，GB/s
    2,061.2 left arrow 9.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2470

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Samsung M471A2K43BB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4000C18-16GVK 16GB
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内存RAM
Samsung M391B5273CH0-CH9 4GB
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A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMR16GX4M2C3000C15 8GB
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内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F4-3733C17-8GTZSW 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Super Talent F3200UA8G 8GB
Super Talent F3200UA8G 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KY7N41-MID 8GB
Kingston KY7N41-MID 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
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Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM