A-DATA Technology VDQVE1B16 2GB vs Samsung M471A4G43BB1-CWE 32GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 70

左右 34% 更低的延时
更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.3

测试中的平均数值

Samsung M471A4G43BB1-CWE 32GB

需要考虑的原因
Samsung M471A4G43BB1-CWE 32GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Samsung M471A4G43BB1-CWE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 70
读取速度，GB/s

4,937.3 15.0
写入速度，GB/s

2,061.2 14.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

759 2519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F4-3200C16-8GFX 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Kingston 9905624-022.A00G 8GB

Kingston 9905624-022.A00G 8GB

Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9905700-013.A00G 8GB

Kingston 9905700-013.A00G 8GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB