A-DATA Technology VDQVE1B16 2GB vs SK Hynix HMA82GU6MFR8N-TF 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 13.9

测试中的平均数值

SK Hynix HMA82GU6MFR8N-TF 16GB

需要考虑的原因
SK Hynix HMA82GU6MFR8N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时
更快的写入速度，GB/s

8.5 2,061.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA82GU6MFR8N-TF 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

4,937.3 13.9
写入速度，GB/s

2,061.2 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMT32GX4M2C3466C16 16GB

Corsair CMT32GX4M2C3466C16 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

SK Hynix HMA84GR7AFR4N-UH 32GB

SK Hynix HMA84GR7AFR4N-UH 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMW64GX4M4E3200C16 16GB

Corsair CMW64GX4M4E3200C16 16GB