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A-DATA Technology VDQVE1B16 2GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
比较
A-DATA Technology VDQVE1B16 2GB vs V-Color Technology Inc. TL48G26S8KRRGB16 8GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
59
左右 22% 更低的延时
更快的读取速度,GB/s
4
17.7
测试中的平均数值
需要考虑的原因
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
报告一个错误
更快的写入速度,GB/s
8.5
2,061.2
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
59
读取速度,GB/s
4,937.3
17.7
写入速度,GB/s
2,061.2
8.5
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
759
2225
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Kllisre D4 8G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK16GX4M2Z2666C16 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Mushkin 991988 (996988) 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston 99U5471-056.A00LF 8GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-4000C16-16GTRS 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Team Group Inc. ZEUS-2133 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Kingston 9905403-437.A01LF 4GB
SK Hynix GKE800SO51208-2133AH 8GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905665-017.A00G 4GB
报告一个错误
×
Bug description
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