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AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

AMD AE34G1601U1 4GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Chun Well Technology Holding Limited MD4U0840180BCW 8GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 67
    左右 -158% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 26
  • 读取速度，GB/s
    6.8 left arrow 18.2
  • 写入速度，GB/s
    3.6 left arrow 17.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3938

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G21332 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM