AMD AE34G1601U1 4GB vs Corsair CMK32GX4M4Z3200C16 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Corsair CMK32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMK32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 67

左右 -97% 更低的延时
更快的读取速度，GB/s

16.6 6.8

测试中的平均数值
更快的写入速度，GB/s

14.4 3.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Corsair CMK32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 34
读取速度，GB/s

6.8 16.6
写入速度，GB/s

3.6 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

998 3415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston 9965640-035.C00G 32GB

Kingston 9965640-035.C00G 32GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Apacer Technology GD2.1542WS.001 8GB

Apacer Technology GD2.1542WS.001 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB