AMD AE34G1601U1 4GB vs Crucial Technology BL8G26C16S4B.8FD 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Crucial Technology BL8G26C16S4B.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16S4B.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 67

左右 -116% 更低的延时
更快的读取速度，GB/s

16.3 6.8

测试中的平均数值
更快的写入速度，GB/s

12.9 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Crucial Technology BL8G26C16S4B.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 31
读取速度，GB/s

6.8 16.3
写入速度，GB/s

3.6 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

998 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3866C18-8GTZ 8GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Kingston 9905403-156.A00LF 2GB

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Essencore Limited KD4AGU880-32A160T 16GB

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Samsung M393B1G70QH0-YK0 8GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

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Corsair CMWX8GD3600C18W4 8GB

Kingston 9965525-140.A00LF 8GB

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Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB