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AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

AMD AE34G1601U1 4GB vs Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 67
    左右 -148% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 27
  • 读取速度，GB/s
    6.8 left arrow 17.3
  • 写入速度，GB/s
    3.6 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    998 left arrow 2735

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Kingston 9965684-013.A00G 8GB
Kingston 9965684-013.A00G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C16-8GRS 8GB
G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 9905713-035.A00G 8GB
Kingston 9905713-035.A00G 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 99U5702-101.A00G 8GB
Kingston 99U5702-101.A00G 8GB
内存RAM