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AMD AE34G1601U1 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB

AMD AE34G1601U1 4GB vs G Skill Intl F4-4000C17-16GTRSB 16GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
G Skill Intl F4-4000C17-16GTRSB 16GB 需要考虑的原因
G Skill Intl F4-4000C17-16GTRSB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 67
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 36
  • 读取速度，GB/s
    6.8 left arrow 14.8
  • 写入速度，GB/s
    3.6 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3422

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

G Skill Intl F4-4000C17-16GTRSB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2666C19-8GIS 8GB
G Skill Intl F4-2666C19-8GIS 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
V-Color Technology Inc. TA48G36S818BNK 8GB
V-Color Technology Inc. TA48G36S818BNK 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
内存RAM