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AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

AMD AE34G1601U1 4GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 67
    左右 -179% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 24
  • 读取速度，GB/s
    6.8 left arrow 18.4
  • 写入速度，GB/s
    3.6 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3158

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-140.A00LF 8GB
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内存RAM
AMD AE34G1601U1 4GB
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内存RAM
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Samsung M393B5170FH0-CH9 4GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM