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AMD AE34G1601U1 4GB
Lexar Co Limited LD4AS016G-H3200GST 16GB

AMD AE34G1601U1 4GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Lexar Co Limited LD4AS016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 67
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 44
  • 读取速度，GB/s
    6.8 left arrow 16.6
  • 写入速度，GB/s
    3.6 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3146

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Lexar Co Limited LD4AS016G-H3200GST 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965589-030.D01G 8GB
Kingston 9965589-030.D01G 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston KST-2133MHZ-4G 4GB
Kingston KST-2133MHZ-4G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMSX32GX4M2A3000C18 16GB
Corsair CMSX32GX4M2A3000C18 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston LV26D4S9S8HJ-8 8GB
Kingston LV26D4S9S8HJ-8 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM