AMD AE34G1601U1 4GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Panram International Corporation L421008G4C1528K34O8A 8GB

需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 67

左右 -205% 更低的延时
更快的读取速度，GB/s

17.5 6.8

测试中的平均数值
更快的写入速度，GB/s

12.8 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Panram International Corporation L421008G4C1528K34O8A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 22
读取速度，GB/s

6.8 17.5
写入速度，GB/s

3.6 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 3013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF1G64AZ-1G6E1 8GB

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SK Hynix HMA41GU7AFR8N-TF 8GB

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Essencore Limited KD48GS481-26N1600 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Kingston 9965525-018.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kllisre HMA81GU6AFR8N-VK 8GB

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Kingston 9905630-007.A00G 8GB

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Kingston 9905713-017.A00G 4GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

Corsair CMK128GX4M8X3800C19 16GB

Corsair CMK128GX4M8X3800C19 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Patriot Memory (PDP Systems) PSD416G26662S 16GB

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