AMD AE34G1601U1 4GB vs Vasekey M378A1K43BB2-CPB 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Vasekey M378A1K43BB2-CPB 8GB

需要考虑的原因
Vasekey M378A1K43BB2-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 67

左右 -191% 更低的延时
更快的读取速度，GB/s

13.5 6.8

测试中的平均数值
更快的写入速度，GB/s

6.1 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Vasekey M378A1K43BB2-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 23
读取速度，GB/s

6.8 13.5
写入速度，GB/s

3.6 6.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2121

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M393B1G70QH0-CMA 8GB

Samsung M393B1G70QH0-CMA 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

OCZ OCZ3G2000LV2G 2GB

OCZ OCZ3G2000LV2G 2GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB