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AMD AE34G2139U2 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB

AMD AE34G2139U2 4GB vs Apacer Technology 78.C1GM3.C7Z0B 8GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Apacer Technology 78.C1GM3.C7Z0B 8GB 需要考虑的原因
Apacer Technology 78.C1GM3.C7Z0B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 56
    左右 -124% 更低的延时
  • 更快的读取速度，GB/s
    13 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.5 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 25
  • 读取速度，GB/s
    7.4 left arrow 13.0
  • 写入速度，GB/s
    5.6 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 2041

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Apacer Technology 78.C1GM3.C7Z0B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA82GR7AFR4N-VK 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CM4X4GF3000C15K4 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK32GX4M2D3200C16 16GB
Corsair CMK32GX4M2D3200C16 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
内存RAM