AMD AE34G2139U2 4GB vs Crucial Technology BL8G26C16U4W.8FD 8GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

Crucial Technology BL8G26C16U4W.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16U4W.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 56

左右 -93% 更低的延时
更快的读取速度，GB/s

16.2 7.4

测试中的平均数值
更快的写入速度，GB/s

13.0 5.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

Crucial Technology BL8G26C16U4W.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 29
读取速度，GB/s

7.4 16.2
写入速度，GB/s

5.6 13.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1462 3221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair MK16GX44B3000C15 4GB

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Kingston ACR256X64D3S1333C9 2GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Crucial Technology CT16G4DFD8266.M16FD 16GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3600C19-16GSXKB 16GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3600C16-16GTZNC 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB