AMD AE34G2139U2 4GB vs G Skill Intl F4-3200C14-8GTZRX 8GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 56

左右 -155% 更低的延时
更快的读取速度，GB/s

20.3 7.4

测试中的平均数值
更快的写入速度，GB/s

17.2 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

G Skill Intl F4-3200C14-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 22
读取速度，GB/s

7.4 20.3
写入速度，GB/s

5.6 17.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1462 4116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Micron Technology 8ATF51264HZ-2G1A2 4GB

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PNY Electronics PNY 2GB

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Samsung M393B1K70QB0-CK0 8GB

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Kingston KHX3333C16D4/16GX 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Lenovo LMKU8G68AHFHD-32A 8GB

Lenovo LMKU8G68AHFHD-32A 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905624-019.A00G 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB