AMD AE34G2139U2 4GB vs G Skill Intl F4-3200C14-8GTZRX 8GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 56

左右 -155% 更低的延时
更快的读取速度，GB/s

20.3 7.4

测试中的平均数值
更快的写入速度，GB/s

17.2 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

G Skill Intl F4-3200C14-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 22
读取速度，GB/s

7.4 20.3
写入速度，GB/s

5.6 17.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1462 4116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/4G 4GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-2666C15-8GRKB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3600C14-16GTRG 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Kingston 99U5469-045.A00LF 4GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Lenovo LMKU8G68AHFHD-32A 8GB

Lenovo LMKU8G68AHFHD-32A 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB