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AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

AMD AE34G2139U2 4GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 56
    左右 -115% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 26
  • 读取速度，GB/s
    7.4 left arrow 18.9
  • 写入速度，GB/s
    5.6 left arrow 16.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3866

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK64GX4M4C3000C15 16GB
Corsair CMK64GX4M4C3000C15 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM