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AMD AE34G2139U2 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

AMD AE34G2139U2 4GB vs Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 56
    左右 -155% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 22
  • 读取速度，GB/s
    7.4 left arrow 17.2
  • 写入速度，GB/s
    5.6 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 3035

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology GD2.2229BH.001 16GB
Apacer Technology GD2.2229BH.001 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK16GX4M4B3300C16 4GB
Corsair CMK16GX4M4B3300C16 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C14-32GVK 32GB
G Skill Intl F4-3200C14-32GVK 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM