RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
比较
AMD AE34G2139U2 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
总分
AMD AE34G2139U2 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
56
左右 -115% 更低的延时
更快的读取速度,GB/s
16.2
7.4
测试中的平均数值
更快的写入速度,GB/s
12.6
5.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
56
26
读取速度,GB/s
7.4
16.2
写入速度,GB/s
5.6
12.6
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1462
2955
AMD AE34G2139U2 4GB RAM的比较
AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB RAM的比较
A-DATA Technology DDR4 2666 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X4GF2400C16N2 4GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMT64GX4M8X3000C15 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Hexon Technology Pte Ltd HEXON 1GB
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Samsung M391B5273CH0-CH9 4GB
Team Group Inc. DDR4 2800 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Kingston XVTW4H-MIE 32GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-3200C16-8GVR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
报告一个错误
×
Bug description
Source link