AMD AE34G2139U2 4GB vs Micron Technology 16ATF4G64HZ-2G6B2 32GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

Micron Technology 16ATF4G64HZ-2G6B2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B2 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 56

左右 -60% 更低的延时
更快的读取速度，GB/s

15.4 7.4

测试中的平均数值
更快的写入速度，GB/s

11.8 5.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 35
读取速度，GB/s

7.4 15.4
写入速度，GB/s

5.6 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1462 2926

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology M471A1K43BB1-CRC 8GB

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Corsair CMU16GX4M2C3000C15 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BL8G32C16S4B.8FE 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston XN205T-MIE 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

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Kingston 99U5584-001.A00LF 4GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB