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AMD R5316G1609U2K 8GB
Apacer Technology 78.C1GQB.4032B 8GB

AMD R5316G1609U2K 8GB vs Apacer Technology 78.C1GQB.4032B 8GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Apacer Technology 78.C1GQB.4032B 8GB 需要考虑的原因
Apacer Technology 78.C1GQB.4032B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 73
    左右 -143% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Apacer Technology 78.C1GQB.4032B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 30
  • 读取速度，GB/s
    6.3 left arrow 17.5
  • 写入速度，GB/s
    5.2 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3205

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Apacer Technology 78.C1GQB.4032B 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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A-DATA Technology DDR3 1600 4GB
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G Skill Intl F4-3600C14-16GVK 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CM3X1G1600C9DHX 1GB
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内存RAM
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内存RAM
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung M471A2K43EB1-CWE 16GB
内存RAM
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内存RAM