Samsung M378B5273CH0-CH9 4GB vs Kingston 99U5713-003.A00G 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston 99U5713-003.A00G 4GB

Kingston 99U5713-003.A00G 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 77

左右 52% 更低的延时
更快的写入速度，GB/s

8.4 5.6

测试中的平均数值

Kingston 99U5713-003.A00G 4GB

需要考虑的原因
Kingston 99U5713-003.A00G 4GB

报告一个错误

更快的读取速度，GB/s

13.6 13.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston 99U5713-003.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 77
读取速度，GB/s

13.2 13.6
写入速度，GB/s

8.4 5.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 1267

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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A-DATA Technology DDR4 3333 2OZ 4GB

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INTENSO GKE800UD102408-2133 8GB

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Kingston KF3200C16D4/8GX 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

INTENSO M418039 8GB

INTENSO M418039 8GB

Corsair CMV4GX3M1B1600C11 4GB

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Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB