AMD R5316G1609U2K 8GB vs Crucial Technology BLS4G4D26BFSE.8FE 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology BLS4G4D26BFSE.8FE 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 73

左右 -284% 更低的延时
更快的读取速度，GB/s

20.4 6.3

测试中的平均数值
更快的写入速度，GB/s

14.8 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 19
读取速度，GB/s

6.3 20.4
写入速度，GB/s

5.2 14.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 3066

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D240FSC.16FD 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Nanya Technology NT2GC64B88B0NS-CG 2GB

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Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB