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Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

总分
star star star star star
Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 33% 更低的延时
Nanya Technology NT2GC64B88B0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB
报告一个错误
  • 更快的读取速度，GB/s
    11.1 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 5.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 8500
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 43
  • 读取速度，GB/s
    8.9 left arrow 11.1
  • 写入速度，GB/s
    5.3 left arrow 7.3
  • 内存带宽，mbps
    8500 left arrow 10600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1178 left arrow 1357

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
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