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Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
总分
Nanya Technology NT2GC64B88B0NS-CG 2GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
43
左右 33% 更低的延时
需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB
报告一个错误
更快的读取速度,GB/s
11.1
8.9
测试中的平均数值
更快的写入速度,GB/s
7.3
5.3
测试中的平均数值
更高的内存带宽,mbps
10600
8500
左右 1.25 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
29
43
读取速度,GB/s
8.9
11.1
写入速度,GB/s
5.3
7.3
内存带宽,mbps
8500
10600
Other
描述
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
7-7-7-20 / 1066 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1178
1357
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB RAM的比较
Elpida EBJ21UE8BDS0-DJ-F 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB RAM的比较
Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C
Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston X2YH1K-MIE 16GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.DAGRL.4050C 16GB
Kingston 9905316-106.A02LF 1GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M386A4K40BB0-CRC 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMW32GX4M2D3600C18 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Samsung M471B5173QH0-YK0 4GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905703-008.A00G 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
×
Bug description
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