RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Elpida EBJ21UE8BDS0-DJ-F 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

总分
star star star star star
Elpida EBJ21UE8BDS0-DJ-F 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB

差异 规格 评论

差异

Elpida EBJ21UE8BDS0-DJ-F 2GB 需要考虑的原因
Elpida EBJ21UE8BDS0-DJ-F 2GB
报告一个错误
  • 更快的写入速度，GB/s
    6.7 left arrow 5.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 8500
    左右 1.25% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    8.9 left arrow 8.6
    测试中的平均数值

规格

完整的技术规格清单
Elpida EBJ21UE8BDS0-DJ-F 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 29
  • 读取速度，GB/s
    8.6 left arrow 8.9
  • 写入速度，GB/s
    6.7 left arrow 5.3
  • 内存带宽，mbps
    10600 left arrow 8500
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1066 MHz
  • 排名PassMark (越多越好)
    1241 left arrow 1178

Elpida EBJ21UE8BDS0-DJ-F 2GB RAM的比较

Kingston 9905458-017.A01LF 4GB
SK Hynix HMT325S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston 9965662-002.A01G 16GB
Kingston 9965662-002.A01G 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology GD2.1527WH.002 8GB
Apacer Technology GD2.1527WH.002 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMR16GX4M2D3200C16 8GB
Corsair CMR16GX4M2D3200C16 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Apacer Technology 78.B1GN3.4032B 4GB
Apacer Technology 78.B1GN3.4032B 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M2B2800C14 8GB
Corsair CMK16GX4M2B2800C14 8GB
内存RAM