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AMD R5316G1609U2K 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB

AMD R5316G1609U2K 8GB vs Essencore Limited IM48GU48A32-GIISMZ 8GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Essencore Limited IM48GU48A32-GIISMZ 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Essencore Limited IM48GU48A32-GIISMZ 8GB 需要考虑的原因
Essencore Limited IM48GU48A32-GIISMZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 73
    左右 -284% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 19
  • 读取速度，GB/s
    6.3 left arrow 20.0
  • 写入速度，GB/s
    5.2 left arrow 16.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3444

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Essencore Limited IM48GU48A32-GIISMZ 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM
Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Neo Forza NMUD416E82-3600 16GB
Neo Forza NMUD416E82-3600 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM