AMD R5316G1609U2K 8GB vs G Skill Intl F4-3000C16-16GTZR 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-3000C16-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 73

左右 -152% 更低的延时
更快的读取速度，GB/s

17.6 6.3

测试中的平均数值
更快的写入速度，GB/s

14.2 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-3000C16-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 29
读取速度，GB/s

6.3 17.6
写入速度，GB/s

5.2 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 3573

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 9DNPBNZB-TATP 4GB

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Kingston K821PJ-MIB 16GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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G Skill Intl F4-3000C16-16GTZR 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston KVR16N11/8-SP 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Kingston HP32D4U8S8HC-8XR 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT16G4SFRA266.M16FR 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

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Samsung M378A2K43DB1-CVF 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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