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AMD R5316G1609U2K 8GB
G Skill Intl F4-4000C19-16GTZSW 16GB

AMD R5316G1609U2K 8GB vs G Skill Intl F4-4000C19-16GTZSW 16GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
G Skill Intl F4-4000C19-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 73
    左右 -232% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
G Skill Intl F4-4000C19-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 22
  • 读取速度，GB/s
    6.3 left arrow 16.9
  • 写入速度，GB/s
    5.2 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3192

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMK64GX4M4A2400C16 16GB
Corsair CMK64GX4M4A2400C16 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Roa Logic BV W4U2666CX1-8G 8GB
Roa Logic BV W4U2666CX1-8G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
Unifosa Corporation GU502203EP0201 1GB
Unifosa Corporation GU502203EP0201 1GB
Kingston 9905713-035.A00G 8GB
Kingston 9905713-035.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW128GX4M4D3600C18 32GB
Corsair CMW128GX4M4D3600C18 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
内存RAM