AMD R5316G1609U2K 8GB vs Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

20.1 6.3

测试中的平均数值
更快的写入速度，GB/s

13.7 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

6.3 20.1
写入速度，GB/s

5.2 13.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C15-16GVK 16GB

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Crucial Technology CT16G4SFD8213.C16FH1 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston KHX2666C15D4/4G 4GB

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Micron Technology 36ASF2G72PZ-2G4AT 16GB

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Crucial Technology CT16G4SFS832A.M8FB 16GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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Corsair CMU16GX4M2D3200C16 8GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMT64GX4M4Z3600C18 16GB

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Kingston KTC1G-UDIMM 1GB

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB