PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-8GTZRX 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

G Skill Intl F4-3200C16-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZRX 8GB

报告一个错误

更快的读取速度，GB/s

19.2 13.8

测试中的平均数值
更快的写入速度，GB/s

15.4 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.8 19.2
写入速度，GB/s

8.4 15.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-16GVK 16GB

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Samsung M391B5673EH1-CH9 2GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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SK Hynix HMA84GL7MMR4N-TF 32GB

SK Hynix HMT451S6BFR8A-PB 4GB

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Apacer Technology 78.D1GMM.AU10B 16GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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A-DATA Technology DQVE1908 512MB

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Apacer Technology 76.C102G.D170B 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Crucial Technology CT4G4DFS8213.C8FBD2 4GB

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AMD R5316G1609U2K 8GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

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G Skill Intl F4-4266C19-8GTZKW 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

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Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB