AMD R5316G1609U2K 8GB vs Kingston 9905665-023.A00G 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Kingston 9905665-023.A00G 4GB

需要考虑的原因
Kingston 9905665-023.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 -181% 更低的延时
更快的读取速度，GB/s

14.2 6.3

测试中的平均数值
更快的写入速度，GB/s

7.7 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Kingston 9905665-023.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 26
读取速度，GB/s

6.3 14.2
写入速度，GB/s

5.2 7.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 1813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD8266.M16FJ 16GB

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Kingston 99U5474-038.A00LF 4GB

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Crucial Technology BL8G30C15U4R.8FE 8GB

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AMD R5316G1609U2K 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Corsair CM4X8GE2400C16K4 8GB

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Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

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Kingston ASU21D4U5S8MB-8 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

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Kingston 9905471-017.A00LF 4GB

Corsair CMD8GX3M2A1600C8 4GB

Corsair CMD8GX3M2A1600C8 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Mushkin 99[2/7/4]191[F/T] 4GB

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Kingston 9905403-156.A00LF 2GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB