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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905665-023.A00G 4GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston 9905665-023.A00G 4GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Kingston 9905665-023.A00G 4GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更快的读取速度,GB/s
16.7
14.2
测试中的平均数值
更快的写入速度,GB/s
11.8
7.7
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Kingston 9905665-023.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905665-023.A00G 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
16.7
14.2
写入速度,GB/s
11.8
7.7
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2756
1813
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston 9905665-023.A00G 4GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4X16GC3000C16K8 16GB
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Kingston 9905471-002.A00LF 2GB
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SK Hynix HMA84GR7JJR4N-VK 32GB
Kingston ACR256X64D3S1333C9 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Kingston 9905403-090.A01LF 4GB
Team Group Inc. DDR4 2800 8GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMU32GX4M2D3200C16 16GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMSX32GX4M1A2666C18 32GB
Samsung M378A1G43EB1-CPB 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
报告一个错误
×
Bug description
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